CMOS-Compatible MESFETs for High Power RF Integrated Circuits
نویسندگان
چکیده
منابع مشابه
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Silicon-on-insulator MESFETs have been fabricated using standard CMOS process flows and their characteristics have been measured over a temperature range of –180°C to + 300°C. From the measured data a TOM3 Spice model has been extracted. The Spice model has been used to simulate a two-stage operational transconductance amplifier and a voltage controlled oscillator. The circuit simulations show ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Semiconductor Manufacturing
سال: 2019
ISSN: 0894-6507,1558-2345
DOI: 10.1109/tsm.2018.2867449